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Avalanche Diode
    Publish time 2020-04-22 17:05    
Avalanche Diode


Type


VRRM


IF(AV) THS 55


IRRM


VFM/IFM 25


RTH(j-hs)


Tjm



Outline

V

A

mA

V/A

/W

KN

ZB200A

100-5000

200

16

1.8/600

0.090

150

3.3-5.5

A-2,8,12,15

ZB300A

100-5000

300

30

1.8/900

0.065

150

5.3-10

A-3,9,16

ZB400A

100-5000

400

40

1.8/1200

0.040

150

10-20

A-4,10,13,17,18

ZB500A

100-5000

500

40

1.8/1500

0.040

150

10-20

A-4,10,13,17,18


Type


VRRM


IF(AV)
THS 55


trr
100


Qrr


IFSM
10ms


IRRM


VFM/IFM 25


RTH(j-hs)


Tjm



Outline

V

A

μS

μC

KA

mA

V/A

/W

KN

ZK200A

100-5000

200

2

70

2.7

16

2.2/600

0.090

150

3.3-5.5

A-2,8,12,15

ZK300A

100-5000

300

3

100

4.1

30

2.4/900

0.065

150

5.3-10

A-3,9,16

ZK400A

100-5000

400

3

100

5.4

40

2.4/1200

0.040

150

10-20

A-4,10,13,17,18

ZK500A

100-5000

500

3

120

8

40

2.4/1800

0.033

150

10-20

A-4,10,13,17,18

ZK800A

100-5000

800

3

130

10

40

2.6/2400

0.033

150

10-20

A-5,19

ZK1000A

100-5000

1000

4

150

13

50

2.6/3000

0.030

150

15-20

A-6,11,14,20

 

Note:
■IGT
VGTIH are test values under 25 . Unless otherwise specified,other parameters in the parameter table are test values under Tjm.
■I²t=I²TSM×tw/2:tw=bottom width of half-sinusoid current. Under 50Hz
I²t=0.00512TSM(A²S)
■When working under the current of 60 Hz:ITSM(8.3ms)=ITSM(10M=ms)×1.066
Tj=Tjm I²t(8.3ms)=I²t(10ms)×0.943,Tj=Tjm
■Gate lead
white or colorless,cathode lead (if necessary): red